Microdose induced data loss on floating gate memories

被引：41
作者：
Guertin, Steven M. [1 ]
Nguyen, Duc N. [1 ]
Patterson, Jeffrey D. [1 ]
机构：
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2006年 / 53卷 / 06期
关键词：
flash; floating gate; microdose; SEU;
D O I：
10.1109/TNS.2006.885861
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Heavy ion irradiation of Hash memories shows loss of stored data. The fluence dependence is indicative of microdose effects. Other qualitative factors identifying the effect as microdose are discussed. The data is presented, and compared to statistical results of a microdose target-based model.
引用
收藏
页码：3518 / 3524
页数：7
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