Temperature shift of the absorption edge and Urbach tail of ZrSxSe2-x single crystals

被引:9
|
作者
Moustafa, Mohamed [1 ,2 ]
Wasnick, Anke [2 ]
Janowitz, Christoph [2 ]
Manzke, Recardo [2 ]
机构
[1] Amer Univ Middle East, Coll Engn, Egaila, Kuwait
[2] Humboldt Univ, Inst Phys, Newtonstr 15, D-12489 Berlin, Germany
关键词
TRANSITION-METAL DICHALCOGENIDES; ANGLE-RESOLVED PHOTOEMISSION; DER-WAALS EPITAXY; LAYER COMPOUNDS; OPTICAL-PROPERTIES; ENERGY-GAP; ELECTRONIC-PROPERTIES; BAND-STRUCTURE; GROUP-IVA; DEPENDENCE;
D O I
10.1103/PhysRevB.95.245207
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The temperature dependence of the absorption-edge energy has been determined in mixed layered transition-metal dichalcogenides of ZrSxSe(2-x), for x = 0.5, 1.0, 1.5, and 2.0 in the range of 32-300 K. The single crystals of ZrSxSe(2-x) samples have been grown by the chemical vapor transport technique and characterized with the help of different methods. The absorption edge is found to shift toward lower energy with increasing the temperature. The experimental spectra and the parameters that describe the temperature dependence of the absorption edges are evaluated and described in the framework of the model proposed by Manoogian and Woolley [Can. J. Phys. 62, 285 (1984)]. The presence of the Urbach tail just below the band edge of ZrSxSe(2-x) was observed. The steepness parameter sigma and its functional temperature and composition dependence are discussed. Additionally, the values of the Urbach energies as well as the phonon energies are deduced. The obtained results support that the thermal phonon interactions and the structural and compositional disorders contribute to the Urbach tail in ZrSxSe(2-x) crystals.
引用
收藏
页数:7
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