High quality 6H- and 4H-SiC pn structures with stable electric breakdown grown by liquid phase epitaxy

被引：40

作者：

Rendakova, S ^{[1
]}

Ivantsov, V

Dmitriev, V

机构：

[1] Russian Acad Sci, Ioffe Inst, PhysTech WBG Res Grp, St Petersburg 194021, Russia

[2] Crystal Growth Res Ctr, St Petersburg 194021, Russia

[3] TDI Inc, Bethesda, MD 20814 USA

[4] Howard Univ, Mat Sci Res Ctr Excellence, Washington, DC 20059 USA

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

liquid phase epitaxy; micropipes; aluminum acceptors; pn junctions;

D O I：

10.4028/www.scientific.net/MSF.264-268.163

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Material issues currently limiting performance of silicon carbide devices include high defect density in epitaxial structures, insufficient doping level in contact layers, and unstable electric breakdown. In this paper, we review recent results on SIC liquid phase epitaxy (LPE) addressing these problems.

引用

页码：163 / 166

页数：4