Heating-induced carrier accumulation in the optical confinement layer and the output power in broadened symmetric and narrow asymmetric waveguide laser diodes

被引：16

作者：

Ryvkin, Boris ^{[1
]}

Avrutin, Eugene

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Univ York, Dept Elect, York YO10 5DD, N Yorkshire, England

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 12期

关键词：

D O I：

10.1063/1.2749464

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We analyze the thermal effects in carrier accumulation (leakage) in the optical confinement layer of high-power lambda=1.06 mu m semiconductor lasers. The experimental data for the symmetric broadened-cavity lasers are analyzed to extract the information on the current dependence of the internal loss and laser temperature. These data are used to predict the thermal behavior and output power-current dependence of a proposed asymmetric nonbroadened construction operating at the same wavelength, and a significant improvement is predicted. (c) 2007 American Institute of Physics.

引用

页数：5

共 21 条

[1] Heating-induced carrier accumulation in the optical confinement layer and the output power in broadened symmetric and narrow asymmetric waveguide laser diodes (vol 101, art 123115, 2007)
Ryvkin, Boris
Avrutin, Eugene
JOURNAL OF APPLIED PHYSICS, 2007, 102 (07)
[2] The role of carrier accumulation in the optical confinement layer in output efficiency deterioration of laser diodes
Avrutin, Eugene A.
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2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC), 2016,
[3] High power separate confinement heterostructure AlGaAs/GaAs laser diodes with broadened waveguide
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LASER DIODES AND APPLICATIONS II, 1996, 2682 : 20 - 26
[4] Non-uniform carrier accumulation in optical confinement layer as ultimate power limitation in ultra-high-power broad-waveguide pulsed InGaAs/GaAs/AlGaAs laser diodes
Ryvkin, B.
Avrutin, E.
ELECTRONICS LETTERS, 2006, 42 (22) : 1283 - 1284
[5] Effects of an undoped-InGaN waveguide on the optical confinement and carrier dynamics of InGaN laser diodes
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Singh, Kuldip
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LASER PHYSICS, 2018, 28 (12)
[6] High-Power Multimode Laser Diodes (λ = 976 nm) Based on Asymmetric Heterostructures with a Broadened Waveguide and Reduced Vertical Divergence
S. O. Slipchenko
A. A. Podoskin
D. N. Nikolaev
V. V. Shamakhov
I. S. Shashkin
M. I. Kondratov
I. N. Gordeev
A. E. Grishin
A. E. Kazakova
P. S. Gavrina
K. V. Bakhvalov
P. S. Kop’ev
N. A. Pikhtin
Bulletin of the Lebedev Physics Institute, 2023, 50 : S976 - S983
[7] High-Power Multimode Laser Diodes (λ=976 nm) Based on Asymmetric Heterostructures with a Broadened Waveguide and Reduced Vertical Divergence
Slipchenko, S. O.
Podoskin, A. A.
Nikolaev, D. N.
Shamakhov, V. V.
Shashkin, I. S.
Kondratov, M. I.
Gordeev, I. N.
Grishin, A. E.
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Gavrina, P. S.
Bakhvalov, K. V.
Kop'ev, P. S.
Pikhtin, N. A.
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2023, 50 (SUPPL 9) : S976 - S983
[8] Increasing output power of pulsed-eye safe wavelength range laser diodes by strong doping of the n-optical confinement layer
Avrutin, Eugene A.
Ryvkin, Boris S.
Kostamovaara, Juha T.
PROCEEDINGS OF THE 2017 IEEE HIGH POWER DIODE LASERS AND SYSTEMS CONFERENCE (HPD), 2017, : 17 - 18
[9] Strong doping of the n-optical confinement layer for increasing output power of high-power pulsed laser diodes in the eye safe wavelength range
Ryvkin, Boris S.
Avrutin, Eugene A.
Kostamovaara, Juha T.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (12)
[10] Effect of carrier loss through waveguide layer recombination on the internal quantum efficiency in large-optical-cavity laser diodes
Ryvkin, BS
Avrutin, EA
JOURNAL OF APPLIED PHYSICS, 2005, 97 (11)

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