Photoluminescence and optical studies of 4 MeV electron irradiated MOCVD grown GaN

被引：1

作者：

Redko, R. A. ^{[1
,2
]}

Milenin, G., V ^{[1
]}

Shvalagin, V. V. ^{[3
]}

Redko, S. M. ^{[1
]}

Kondratenko, O. S. ^{[1
]}

Shynkarenko, V. V. ^{[1
]}

Neymash, V. B. ^{[4
]}

Povarchuk, V. Y. ^{[4
]}

机构：

[1] Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, 41 Nauky Ave, UA-03028 Kiev, Ukraine

[2] State Univ Telecommun, 7 Solomenska Str, UA-03680 Kiev, Ukraine

[3] Natl Acad Sci Ukraine, L Pysarzhevskiy Inst Phys Chem, 31 Nauky Ave, UA-03028 Kiev, Ukraine

[4] Natl Acad Sci Ukraine, Inst Phys, 46 Nauky Ave, UA-03028 Kiev, Ukraine

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2021年 / 267卷

关键词：

Photoluminescence; Electron irradiation; Diffusion; Refractive index; YELLOW LUMINESCENCE; MAGNETIC MEMORY; RADIATION; TEMPERATURE; EXCITATION; OXYGEN; FILMS;

D O I：

10.1016/j.matchemphys.2021.124669

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of electron irradiation on the evolution of photoluminescence and optical properties of Si-doped GaN was investigated. MOCVD grown GaN thin films were irradiated with 4 MeV electrons at different doses of 1 & sdot;107, 2.5 & sdot;107 and 1 & sdot;108 rad. It was obtained that room temperature photoluminescence as well as transmittance spectra of irradiated samples changed during long-term period after treatment. The low dose effect was observed at 107 rad. Radiation memory effect was detected. Long-term modification model based on the idea of defect diffusion is proposed. Diffusion factors of migrating components are estimated. Irradiation induced effects on the defect subsystem of gallium nitride are discussed.

引用

页数：8

共 68 条

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