Study on Gate Modulation Property of Vacuum Field Emission Triode

被引：1

作者：

Wang, Xiao ^{[1
]}

Shen, Zhihua ^{[2
]}

Jia, Dongbo ^{[3
]}

Wu, Shengli ^{[3
]}

机构：

[1] Shaanxi Univ Sci & Technol, Sch Elect Informat & Artificial Intelligence, Xian 710049, Peoples R China

[2] Nantong Vocat Univ, Sch Elect & Informat Engn, Nantong 226007, Peoples R China

[3] Xi An Jiao Tong Univ, Sch Elect Sci & Engn, Minist Educ, Key Lab Phys Elect & Devices, Xian 710049, Peoples R China

来源：

IVEC 2021: 2021 22ND INTERNATIONAL VACUUM ELECTRONICS CONFERENCE | 2021年

基金：

中国国家自然科学基金;

关键词：

vacuum field emission triode; nano-scale fissure; gate modulation;

D O I：

10.1109/IVEC51707.2021.9722416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An insulated-gate vacuum field emission triode with a nano-scale channel is proposed in this paper. The nano-scale channel of this vacuum triode is generated by using electro-forming process. Experimental results reveal that the fabricated device demonstrates a certain triode behavior of the gate modulation. Moreover, we further optimize the thickness of the insulator layer, demonstrating that the states of the proposed triode could be effectively modulated by bottom-gate bias. Fowler-Nordheim theory is used to analyze the electron emission mechanism and operating principle of the device.

引用

页数：2

共 4 条

[1] Han J, APPL PHYS LETT, V100
[2] Srisonphan S, 2012, NAT NANOTECHNOL, V7, P504, DOI [10.1038/nnano.2012.107, 10.1038/NNANO.2012.107]
[3] Vacuum field-effect transistor with a deep submicron channel fabricated by electro-forming
Wang, Xiao
Shen, Zhihua
Wu, Shengli
Zhang, Jintao
[J]. SOLID-STATE ELECTRONICS, 2017, 132 : 1 - 5
[4] Graphene-Based Nanoscale Vacuum Channel Transistor
Xu Ji
Gu Zhuyan
Yang Wenxin
Wang Qilong
Zhang Xiaobing
[J]. NANOSCALE RESEARCH LETTERS, 2018, 13

← 1 →