Absorption coefficient of size-quantized A3B5 semiconductor film with dislocations

被引：0

作者：

Atoyan, MS ^{[1
]}

Sarkisyan, HA ^{[1
]}

机构：

[1] Yerevan State Univ, Dept Solid State Phys, Yerevan 375025, Armenia

来源：

PHYSICA B-CONDENSED MATTER | 2004年 / 352卷 / 1-4期

关键词：

absorption coefficient; dislocation potential; indirect transition;

D O I：

10.1016/j.physb.2004.07.017

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The indirect absorption of light by size-quantized semiconductor film is theoretically investigated. It is supposed that the mechanism of indirect absorption is conditioned by charge carrier's scattering on dislocations. The dispersion law of electron in the immediate vicinity of the maximum of valence band is considered as non-parabolic and is described in two-band Kane approximation. The absorption coefficient is calculated. It is shown, that under non-parabolic dispersion law of electron the dependence of absorption coefficient on (homega - epsilon(v)(0)) near the absorption edge has quadratic dependence. It is shown, that the non-parabolicity of dispersion law results in increased absorption coefficient. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：241 / 246

页数：6

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