Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

被引：7

作者：

Mathew, S

Bera, LK

Balasubramanian, N

Joo, MS

Cho, BJ

机构：

[1] Inst Microelect, Singapore 117684, Singapore

[2] Natl Univ Singapore, ECE Dept, Silicon Nano Device Lab, Singapore, Singapore

来源：

THIN SOLID FILMS | 2004年 / 462卷

关键词：

high-k dielectrics; HfAlO; mobility; charge trapping;

D O I：

10.1016/j.tsf.2004.05.017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO2 devices. All high-k devices showed lower mobility compared with SiO2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate. (C) 2004 Published by Elsevier B.V.

引用

页码：11 / 14

页数：4