Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

被引：7
作者：
Mathew, S
Bera, LK
Balasubramanian, N
Joo, MS
Cho, BJ
机构：
[1] Inst Microelect, Singapore 117684, Singapore
[2] Natl Univ Singapore, ECE Dept, Silicon Nano Device Lab, Singapore, Singapore
来源：
THIN SOLID FILMS | 2004年 / 462卷
关键词：
high-k dielectrics; HfAlO; mobility; charge trapping;
D O I：
10.1016/j.tsf.2004.05.017
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO2 devices. All high-k devices showed lower mobility compared with SiO2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate. (C) 2004 Published by Elsevier B.V.
引用
收藏
页码：11 / 14
页数：4
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