Tl overlayers on Si(100) and their self-assembly induced by STM tip

被引：8

作者：

Kishida, M

Saranin, AA

Zotov, A

Kotlyar, VG

Nishida, A

Murata, Y

Okado, H

Katayama, M

Oura, K

机构：

[1] Osaka Univ, Fac Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan

[2] Inst Automat & Control Proc, Vladivostok 690041, Russia

[3] Far Eastern State Univ, Fac Phys & Engn, Vladivostok 690000, Russia

[4] Vladivostok State Univ Econ & Serv, Dept Elect, Vladivostok 690600, Russia

来源：

APPLIED SURFACE SCIENCE | 2004年 / 237卷 / 1-4期

关键词：

atom-solid interactions; silicon; thallium; surface structure; morphology; roughness; topography; scanning tunneling microscopy (STM);

D O I：

10.1016/j.apsusc.2004.07.024

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Formation of the thallium (T1) overlayers on the Si(1 0 0) 2 x I surface has been studied using scanning tunneling microscopy (STM). It has been found that adsorption of T1 atom involves a charge transfer leading to the development of a static dipole which is responsible for the field-assisted migration of the T1 adsorbate on the surface. When the STM tip bias voltage is positive, T1 atoms are repelled out from the region underneath the tip apex. In the case of the negative bias voltage, T1 is accumulated underneath the tip. Thus, the observed structure of the surface is controlled not only by T1 coverage, but also by the STM bias voltage and tunneling current. (C) 2004 Published by Elsevier B.V.

引用

页码：110 / 114

页数：5

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