Preparation of ZnSe quantum dots embedded in SiO2 thin films by sol-gel process

被引:0
|
作者
Jiang, HQ [1 ]
Yao, X [1 ]
Che, J [1 ]
Wang, MQ [1 ]
Kong, FT [1 ]
机构
[1] Xian Jiaotong Univ, Elect Mat Res Lab, Key Lab Minist Educ, Xian 710049, Peoples R China
关键词
films; SiO2; ZnSe; quantum dots; reduction;
D O I
10.1016/j.ceramint.2004.03.030
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper, ZnSe quantum dots embedded in SiO2 thin films was successfully prepared with H2SeO4 as selenium source and Zn(Ac)(2)(H2O)-H-. as zinc source by a sol-gel process. Reaction mechanism of synthesizing ZnSe nanocrystallites embedded in silica thin films also was discussed through the XRD and DTA-TG analysis. In the process of synthesizing ZnSe nanocrystallites, (ZnSeO4H2O)-H-. crystallites precipitated in organic solvent was prepared first, then the crystallites were reduced with carbon monoxide atmosphere. The XRD analysis reveals the structure of ZnSe phase is sphalerite (cubic ZnS). XPS results show that the atomic ratio of Se/Zn was smaller than the nominal atomic ratio of the sample, which means the selenium element was volatilized seriously. The AFM images show that the size of ZnSeO4 crystallite was increased with the concentration of selenium element. This approach to synthesis of ZnSe nanocrystallites has the potential application in the preparation of optical composite thin films from sol-gel process. (C) 2004 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:1685 / 1689
页数:5
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