Transport Gap of Nanoparticle-Passivated Silicon Substrates

被引:7
作者
Ghosh, Batu [1 ]
Das, Bikas C. [1 ]
Pal, Amlan J. [1 ]
机构
[1] Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, India
关键词
CdSe nanoparticles; electrostatic assembly; monolayers; surface passivation; transport gaps; SCANNING-TUNNELING-MICROSCOPY; CDSE NANOCRYSTALS; QUANTUM DOTS; PARTICLE; FILM; SEMICONDUCTORS; SPECTROSCOPY; MULTILAYERS; DEPOSITION;
D O I
10.1002/smll.200901327
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The transport gap of bulk Si can be tuned through surface passivation with a monolayer of CdSe nanoparticles. From the normalized density of states, the manner in which the conduction-band edge and transport gap of the system respond to the sizes of the nanoparticles is shown. (Figure Presented). © 2010 WILEY-VCH Verlag GmbH & Co. KGaA,.
引用
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页码:52 / 57
页数:6
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