Low-threshold room-temperature continuous-wave InP quantum dot coupled to InGaP quantum well heterorstucture lasers grown by metalorganic chemical vapor deposition

被引：0
|
作者：
Heller, RD [1 ]
Walter, G [1 ]
Holonyak, N [1 ]
Mathes, DT [1 ]
Hull, R [1 ]
Dupuis, RD [1 ]
机构：
[1] Univ Texas, Ctr Microelect Res, Austin, TX 78712 USA
来源：
2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have grown and characterized InP self-assembled quantum-dots embedded in In-0.49(AlxGa1-x)(0.51)P. For In0.49Al0.51P/In-0.49(AlxGa1-x)(0.51)P/In0.49Ga0.51P/InP QD+QW injection lasers, we have achieved and report CW lasing at 654 mn at 300K with greatly reduced threshold current densities.
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页码：89 / 91
页数：3
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