Intraband spectroscopy of self-organized InAs/InAlAs nanostructures grown on InP(001)

被引：5

作者：

Fossard, F ^{[1
]}

Helman, A

Julien, FH

Gendry, M

Brault, J

Péronne, E

Alexandrou, A

Schacham, SE

Finkman, E

机构：

[1] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France

[2] Ecole Cent Lyon, CNRS, UMR 5512, Lab Elect,LEOM, F-69131 Ecully, France

[3] Ecole Polytech, ENSTA, CNRS, UMR 7639,Lab Opt Appl, F-91761 Palaiseau, France

[4] Coll Judea & Samaria, Dept Elect & Elect Engn, IL-44837 Ariel, Israel

[5] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

[6] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期

关键词：

III-V semiconductors; quantum wires; quantum dots; intraband transitions;

D O I：

10.1016/S1386-9477(02)00779-8

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

InAs nanostructures on InAlAs/InP(001) have been fabricated using Stranski-Krastanov growth mode. Depending on growth conditions, a full coverage of the InAlAs surface by either InAs strings of elongated dots or isolated dots can be achieved. Giant intraband absorptions are observed at mid-infrared wavelengths in both nanostructures. The intraband resonances are strongly polarized in the layer plane as a consequence of the quantum confinement along either [110] and [1 - 10] directions. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：82 / 83

页数：2

共 3 条

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Fossard, F ;

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Brault, J ;

Gendry, M .

INFRARED PHYSICS & TECHNOLOGY, 2001, 42 (3-5) :443-451

[2] Infrared spectroscopy of intraband transitions in self-organized InAs/GaAs quantum dots [J].

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[3] Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001) [J].

Weber, A ;

Gauthier-Lafaye, O ;

Julien, FH ;

Brault, J ;

Gendry, M ;

Désieres, Y ;

Benyattou, T .

APPLIED PHYSICS LETTERS, 1999, 74 (03) :413-415

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