CONTACT HOLE MULTIPLICATION USING GRAPHO-EPITAXY DIRECTED SELF-ASSEMBLY: PROCESS CHOICES, TEMPLATE OPTIMIZATION, AND PLACEMENT ACCURACY

被引:10
作者
Bekaert, Joost [1 ]
Doise, Jan [1 ,2 ]
Kuppuswamy, Vijaya-Kumar Murugesan [1 ,2 ]
Gronheid, Roel [1 ]
Chan, Boon Teik [1 ]
Vandenberghe, Geert [1 ]
Cao, Yi [3 ]
Her, YoungJun [3 ]
机构
[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
[2] Katholieke Univ Leuven, Dept Elect Engn ESAT, B-3001 Heverlee, Belgium
[3] AZ Elect Mat, Somerville, NJ 08876 USA
来源
30TH EUROPEAN MASK AND LITHOGRAPHY CONFERENCE | 2014年 / 9231卷
关键词
Directed Self Assembly (DSA); grapho-epitaxy; templated DSA holes;
D O I
10.1117/12.2066647
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Directed Self Assembly (DSA) of Block Co-Polymers (BCP) has become an intense field of study as a potential patterning solution for future generation devices. The most critical challenges that need to be understood and controlled include pattern placement accuracy, achieving low defectivity in DSA patterns and how to implement this process as a patterning solution. The DSA program at imec includes efforts on these three major topics. Specifically, in this paper the progress for the templated DSA flow within the imec program will be discussed. An experimental assessment is made based on a 37 nm BCP pitch material. In particular, the impact of different process options is illustrated, and data for CD and placement accuracy of the DSA holes in their template is provided.
引用
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页数:11
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