Electrical control of magnetism via resistive switching in Pt/Mn3O4/Nb-doped SrTiO3 heterostructures

被引：11
作者：
Zhao, Meng [1 ,2 ,3 ]
Zhu, Yongdan [1 ,2 ,3 ]
Li, Meiya [2 ,3 ]
Zhang, Yuan [1 ]
Tan, Xingyi [1 ]
Hu, Cheng [1 ]
Wang, Qiangwen [2 ,3 ]
Zhang, Feng [2 ,3 ]
Pu, Shizhou [2 ,3 ]
Xiong, Rui [2 ,3 ]
机构：
[1] Hubei Univ National, Sch Informat Engn, Enshi 445000, Hubei, Peoples R China
[2] Wuhan Univ, Minist Educ, Sch Phys & Technol, Wuhan 430072, Peoples R China
[3] Wuhan Univ, Minist Educ, Key Lab Artificial Micro Nano Struct, Wuhan 430072, Peoples R China
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2017年 / 50卷 / 26期
基金：
中国国家自然科学基金;
关键词：
resistive switching; magnetoelectric coupling; oxygen ion migration; carrier trapping/detrapping; FIELD CONTROL; ROOM-TEMPERATURE; MN3O4; NANOPARTICLES; DEVICE; FERROMAGNETISM; RESISTANCE; STATES;
D O I：
10.1088/1361-6463/aa743d
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Mn3O4 thin films were grown on Nb-doped (0 0 1) SrTiO3 (NSTO) single-crystal substrates by pulsed laser deposition to form Pt/Mn3O4/NSTO heterostructures. Pt/Mn3O4/NSTO devices exhibit bipolar resistive switching (RS) effect with maximum switching ratio of 10(4) and good endurance. When the resistance states of these devices are switched between the low resistance state (LRS) and the high resistance state (HRS), the saturation magnetization, remanent magnetization and coercive field of the Mn3O4 thin films can be modulated simultaneously. The electrical control of magnetism via resistive switching can be attributed to the process of charge trapping/detrapping and oxygen ion migration that leads to changes in the super-exchange interactions between Mn ions at the octahedral and tetrahedral positions. Our work provides a new avenue for exploration of the Mn3O4 resistive switching materials and is significant for understanding the mechanism of the RS effect and multifunctional devices.
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页数：8
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