Single electron pumping in InAs nanowire double quantum dots

被引：47

作者：

Fuhrer, A. ^{[1
]}

Fasth, C. ^{[1
]}

Samuelson, L. ^{[1
]}

机构：

[1] Lund Univ, Nanometer Struct Consortium, S-221 Lund, Sweden

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 05期

关键词：

D O I：

10.1063/1.2767197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Closely spaced local gate electrodes are used to electrically define a double quantum dot along an InAs nanowire crystal. By applying a periodic pulse sequence to two plunger gate electrodes controlling the double quantum dot charge configuration, the device is operated as a single electron pump. The authors find that within measurement accuracy, the pumping current equals one electron per cycle for frequencies up to 2 MHz, demonstrating the suitability of nanowire based quantum dots for pumping applications. (c) 2007 American Institute of Physics.

引用

页数：3

共 13 条

[1] Design of computationally useful single-electron digital circuits [J].

Ancona, MG .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (01) :526-539

[2] Few-electron quantum dots in nanowires [J].

Bjork, MT ;

Thelander, C ;

Hansen, AE ;

Jensen, LE ;

Larsson, MW ;

Wallenberg, LR ;

Samuelson, L .

NANO LETTERS, 2004, 4 (09) :1621-1625

[3] Vertical wrap-gated nanowire transistors [J].

Bryllert, T ;

Wernersson, LE ;

Löwgren, T ;

Samuelson, L .

NANOTECHNOLOGY, 2006, 17 (11) :S227-S230

[4] Tunable double quantum dots in InAs nanowires defined by local gate electrodes [J].

Fasth, C ;

Fuhrer, A ;

Björk, MT ;

Samuelson, L .

NANO LETTERS, 2005, 5 (07) :1487-1490

[5] Few electron double quantum dots in InAs/InP nanowire heterostructures [J].

Fuhrer, Andreas ;

Froberg, Linus E. ;

Pedersen, Jonas Nyvold ;

Larsson, Magnus W. ;

Wacker, Andreas ;

Pistol, Mats-Erik ;

Samuelson, Lars .

NANO LETTERS, 2007, 7 (02) :243-246

[6] Scalable interconnection and integration of nanowire devices without registration [J].

Jin, S ;

Whang, DM ;

McAlpine, MC ;

Friedman, RS ;

Wu, Y ;

Lieber, CM .

NANO LETTERS, 2004, 4 (05) :915-919

[7] Accuracy of electron counting using a 7-junction electron pump [J].

Keller, MW ;

Martinis, JM ;

Zimmerman, NM ;

Steinbach, AH .

APPLIED PHYSICS LETTERS, 1996, 69 (12) :1804-1806

[8] Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures [J].

Ohlsson, BJ ;

Björk, MT ;

Persson, AI ;

Thelander, C ;

Wallenberg, LR ;

Magnusson, MH ;

Deppert, K ;

Samuelson, L .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) :1126-1130

[9] SINGLE-ELECTRON PUMP BASED ON CHARGING EFFECTS [J].

POTHIER, H ;

LAFARGE, P ;

URBINA, C ;

ESTEVE, D ;

DEVORET, MH .

EUROPHYSICS LETTERS, 1992, 17 (03) :249-254

[10] Tunable few-electron quantum dots in InAs nanowires [J].

Shorubalko, I. ;

Pfund, A. ;

Leturcq, R. ;

Borgstroem, M. T. ;

Gramm, F. ;

Mueller, E. ;

Gini, E. ;

Ensslin, K. .

NANOTECHNOLOGY, 2007, 18 (04)

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