Roentgenoluminescence from silicon carbide

被引：1

作者：

Babayants, GI ^{[1
]}

Babayants, KG ^{[1
]}

Popenko, VA ^{[1
]}

机构：

[1] NPO Luch, Res Inst, Fed Unitary State Enterprise, Podolsk 142116, Moscow Oblast, Russia

来源：

TECHNICAL PHYSICS | 2004年 / 49卷 / 12期

关键词：

Silicon; Carbide; Spectral Range; Emission Intensity; Silicon Carbide;

D O I：

10.1134/1.1841416

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is found that single crystals of silicon carbide exposed to soft X rays exhibit luminescence in the visible spectral range. The luminescence intensity from the single crystals produced by different methods differs by three- to fivefold. Also, the emission intensity is nonuniformly distributed over the single crystal surface, which may be related to the nonuniform distribution of impurities (activators). (C) 2004 MAIK "Nauka/Interperiodica".

引用

页码：1631 / 1632

页数：2