SCR ESD protection with reduced trigger voltage

被引：0
|
作者：
Nikolaidis, T [1 ]
Papadas, C [1 ]
机构：
[1] ISD SA, Athens 15233, Greece
来源：
ELECTRONICS LETTERS | 2003年 / 39卷 / 07期
关键词：
D O I：
10.1049/el:20030405
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel silicon controlled rectifier (SCR) electrostatic discharge (ESD) protection compatible with the advanced deep submicron triple well CMOS technologies is presented. By forward biasing the p-well/cathode junction, while keeping the n-well floating during ESD, the SCR trigger and holding voltages coincide at similar to1 V This value can be increased by a composite SCR/diode string circuit.
引用
收藏
页码：608 / 609
页数：2
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