Linearized Dual-Band Power Amplifiers With Integrated Baluns in 65 nm CMOS for a 2 x 2 802.11n MIMO WLAN SoC

被引:56
作者
Afsahi, Ali [1 ,2 ]
Behzad, Arya [1 ]
Magoon, Vikram [1 ]
Larson, Lawrence E. [2 ]
机构
[1] Broadcom Corp, San Diego, CA 92127 USA
[2] Univ Calif San Diego, Ctr Wireless Commun, La Jolla, CA 92093 USA
关键词
CMOS; Power amplifier; WLAN; MIMO; 802.11n; OFDM; linearization; reliability; TRANSCEIVER; DEPENDENCE;
D O I
10.1109/JSSC.2010.2041401
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Fully integrated dual-band power amplifiers with on-chip baluns for 802.11n MIMO WLAN applications are presented. With a 3.3 V supply, the PAs produce a saturated output power of 28.3 dBm and 26.7 dBm with peak drain efficiency of 35.3% and 25.3% for the 2.4 GHz and 5 GHz bands, respectively. By utilizing multiple fully self-contained linearization algorithms, an EVM of -25 dB is achieved at 22.4 dBm for the 2.4 GHz band and 20.5 dBm for the 5 GHz band while transmitting 54 Mbs OFDM. The chip is fabricated in standard 65 nm CMOS and the PAs occupy 0.31 mm(2) (2.4 GHz) and 0.27 mm(2) (5 GHz) area. To examine the reliability of the PAs, accelerated aging tests are performed for several hundreds parts without a single failure.
引用
收藏
页码:955 / 966
页数:12
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