Time Resolution of the 4H-SiC PIN Detector

被引:6
作者
Yang, Tao [1 ,2 ]
Tan, Yuhang [1 ,2 ]
Liu, Qing [3 ]
Xiao, Suyu [1 ,2 ,4 ]
Liu, Kai [1 ]
Zhang, Jianyong [1 ]
Kiuchi, Ryuta [1 ]
Zhao, Mei [1 ]
Zhang, Xiyuan [1 ]
Wang, Congcong [1 ]
Wu, Boyue [5 ]
Lin, Jianing [6 ]
Song, Weimin [6 ]
Lu, Hai [3 ]
Shi, Xin [1 ]
机构
[1] Chinese Acad Sci, Inst High Energy Phys, Beijing, Peoples R China
[2] Univ Chinese Acad Sci, Sch Phys Sci, Beijing, Peoples R China
[3] Nanjing Univ, Sch Elect Sci & Engn, Nanjing, Peoples R China
[4] Shandong Inst Adv Technol, Jinan, Peoples R China
[5] Guangxi Univ, Sch Phys Sci & Technol, Guangxi, Peoples R China
[6] Jilin Univ, Coll Phys, Jilin, Peoples R China
基金
中国国家自然科学基金;
关键词
time resolution; 4H-SiC; MIP; simulation; Shockley-Ramo theorem; TIMING PERFORMANCE; SILICON DETECTORS; LGAD SENSORS; IRRADIATION; TECHNOLOGY; NEUTRON;
D O I
10.3389/fphy.2022.718071
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We address the determination of the time resolution for the 100 mu m 4H-SiC PIN detectors fabricated by Nanjing University (NJU). The time response to beta particles from a Sr-90 source is investigated for the detection of the minimum ionizing particles (MIPs). We study the influence of different reverse voltages, which correspond to different carrier velocities and device sizes, and how this correlates with the detector capacitance. We determine a time resolution (94 +/- 1) ps for a 100 mu m 4H-SiC PIN detector. A fast simulation software, termed RASER (RAdiation SEmiconductoR), is developed and validated by comparing the waveform obtained from simulated and measured data. The simulated time resolution is (73 +/- 1) ps after considering the intrinsic leading contributions of the detector to time resolution.
引用
收藏
页数:8
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