Depth defined optoelectronic modulation spectroscopy

被引：3

作者：

Chiu, CH ^{[1
]}

Swanson, JG ^{[1
]}

机构：

[1] Kings Coll London, Dept Elect Engn, London WC2R 2LS, England

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 05期

关键词：

characterization; electron states; interfaces; GaAs; ion implantation; substrates;

D O I：

10.1007/s11664-000-0050-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that if the gate depletion region of a MESFET is maintained with a constant width, channel current optoelectronic modulation spectroscopy reveals a spectrum of responses arising predominantly from charge variations in the depletion region at the interface between the active layer and the substrate. Optically induced charge variations as small as 2 x 10(9) electrons/cm(2)/eV have been detected. A refinement of the basic method is described which should allow the responses of electron states in a region of selected depth within the active layer states to be seen. The method will be of particular value in observing states that have a role in back-gating.

引用

页码：591 / 597

页数：7