Ensemble Monte Carlo/molecular dynamics simulation of inversion layer mobility in si MOSFETs - Effects of substrate impurity

被引：0

作者：

Kamakura, Y ^{[1
]}

Ryouke, H ^{[1
]}

Taniguchi, K ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect & Informat Syst, Suita, Osaka 5650871, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2003年 / E86C卷 / 03期

关键词：

Monte Carlo simulation; molecular dynamics; mobility; screening; MOSFET;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron transport in bulk Si and MOSFET inversion layers is studied using an ensemble Monte Carlo (EMC) technique coupled with the molecular dynamics (MD) method. The Coulomb interactions among point charges (electrons and negative ions) are directly taken into account in the simulation. It is demonstrated that the static screening of Coulomb interactions is correctly simulated by the EMC/MD method. Furthermore, we calculate the inversion layer mobility in Si MOSFETs, and mobility roll-off near the threshold voltage is observed by the present approach.

引用

页码：357 / 362

页数：6

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