Enhanced carrier lifetime in bulk-grown 4H-SiC substrates

被引：3

作者：

Jenny, J. R. ^{[1
]}

Malta, D. P. ^{[1
]}

Tsvetkov, V. T. ^{[1
]}

Das, M. K. ^{[1
]}

Hobgood, H. McD. ^{[1
]}

Carter, C. H., Jr. ^{[1
]}

机构：

[1] Cree Inc, Durham, NC 27703 USA

来源：

Silicon Carbide and Related Materials 2005, Pts 1 and 2 | 2006年 / 527-529卷

关键词：

lifetime; bulk-growth; MPCD; DLTS; EBIC;

D O I：

10.4028/www.scientific.net/MSF.527-529.31

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To devise a means of circumventing the cost of thick SiC epitaxy to generate drift layers in PiN diodes for > 10kV operation, we have endeavored to enhance the minority carrier lifetimes in bulk-grown substrates. In this paper, we discuss the results of a process that has been developed to enhance minority carrier lifetimes to in excess of 30 mu s in bulk-grown 4H-SiC substrates. Measurement of lifetimes was principally conducted using microwave-photoconductive decay (MPCD). Confirmation of the MPCD lifetime result was obtained by electron beam induced current (EBIC) measurements. Additionally, deep level transient spectroscopic analysis of samples subjected to this process suggests that a significant reduction of deep level defects in general and of Z(1)/Z(2), specifically, may account for the significantly enhanced lifetimes. Finally, a study of operational performance in devices employing drift layers fabricated from substrates produced by this process confirmed ambipolar lifetimes in the microsecond range.

引用

页码：31 / 34

页数：4

共 50 条

[41] Suppression of Bipolar Degradation in 4H-SiC Power Devices by Carrier Lifetime Control
Tsuchida, H.
Murata, K.
Tawara, T.
Miyazato, M.
Miyazawa, T.
Maeda, K.
2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2019,
[42] Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation
Storasta, Liutauras
Tsuchida, Hidekazu
APPLIED PHYSICS LETTERS, 2007, 90 (06)
[43] Evaluation of free carrier lifetime and deep levels of the thick 4H-SiC epilayers
Tawara, T
Tsuchida, H
Izumi, S
Kamata, I
Izumi, K
SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 565 - 568
[44] Influence of epilayer thickness and structural defects on the minority carrier lifetime in 4H-SiC
Kallinger, Birgit
Berwian, Patrick
Friedrich, Jochen
Rommel, Mathias
Azizi, Maral
Hecht, Christian
Friedrichs, Peter
SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 633 - +
[45] Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime
Bathen, Marianne Etzelmuller
Karsthof, Robert
Galeckas, Augustinas
Kumar, Piyush
Kuznetsov, Andrej Yu.
Grossner, Ulrike
Vines, Lasse
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 176
[46] Ultra-high voltage 4H-SiC Thyristor with inhomogeneous carrier lifetime
Liu, Qing
Pu, Hongbin
Wang, Xi
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019,
[47] Investigation of charge carrier lifetime temperature-dependence in 4H-SiC diodes
Udal, Andres
Velmre, Enn
SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 375 - +
[48] The role of carrier lifetime in forward bias degradation of 4H-SiC PiN diodes
Hefner, A
McNutt, T
Berning, D
Singh, R
Akuffo, A
SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 1053 - 1056
[49] Excess carrier lifetime in a bulk p-type 4H-SiC wafer measured by the microwave photoconductivity decay method
Kato, Masashi
Kawai, Masahiko
Mori, Tatsuhiro
Ichimura, Masaya
Sumie, Shingo
Hashizume, Hidehisa
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (8A): : 5057 - 5061
[50] Optical, electrical and lifetime characterization of in-grown stacking faults in 4H-SiC
Caldwell, Joshua David
Klein, Paul B.
Glembocki, Orest J.
Stahlbush, Robert E.
Liu, Kendrick X.
Hobart, Karl D.
Kub, Fritz
SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES, 2006, 911 : 187 - +

← 1 2 3 4 5 →