Properties of AlNx thin films prepared by DC reactive magnetron sputtering

被引：0
|
作者：
Stafiniak, Andrzej [1 ]
Muszynska, Donata [1 ]
Szyszka, Adam [1 ]
Paszkiewicz, Bogdan [1 ]
Ptasinski, Konrad [1 ]
Patela, Sergiusz [1 ]
Paszkiewicz, Regina [1 ]
Tlaczala, Marek [1 ]
机构：
[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland
来源：
OPTICA APPLICATA | 2009年 / 39卷 / 04期
关键词：
aluminum nitride (AlN); thin films; reactive magnetron sputtering; alternative dielectrics; DIELECTRIC-PROPERTIES;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this paper, the results of investigation of the influence of cathode current on optical and dielectric AlNx thin-film properties are presented. AlNx films were prepared by pulsed DC reactive magnetron sputtering of Al target on substrates at room temperature. For characterization of fabricated test structures C-V spectroscopy, ellipsometry measurement and atomic force microscopy (AFM) were used.
引用
收藏
页码：717 / 722
页数：6
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