Properties of AlNx thin films prepared by DC reactive magnetron sputtering

被引：0

作者：

Stafiniak, Andrzej ^{[1
]}

Muszynska, Donata ^{[1
]}

Szyszka, Adam ^{[1
]}

Paszkiewicz, Bogdan ^{[1
]}

Ptasinski, Konrad ^{[1
]}

Patela, Sergiusz ^{[1
]}

Paszkiewicz, Regina ^{[1
]}

Tlaczala, Marek ^{[1
]}

机构：

[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland

来源：

OPTICA APPLICATA | 2009年 / 39卷 / 04期

关键词：

aluminum nitride (AlN); thin films; reactive magnetron sputtering; alternative dielectrics; DIELECTRIC-PROPERTIES;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, the results of investigation of the influence of cathode current on optical and dielectric AlNx thin-film properties are presented. AlNx films were prepared by pulsed DC reactive magnetron sputtering of Al target on substrates at room temperature. For characterization of fabricated test structures C-V spectroscopy, ellipsometry measurement and atomic force microscopy (AFM) were used.

引用

页码：717 / 722

页数：6

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