Interfacial layer observed by ellipsometry in MOCVD grown Pb(Zr, Ti)O3 thin films

被引：4

作者：

Moret, MP

Rössinger, SA

Hageman, PR

Devillers, MA

Van der Linden, H

Haverkamp, E

Larsen, PK

Duan, N

机构：

[1] Univ Nijmegen, Mat Res Inst, NL-6525 ED Nijmegen, Netherlands

[2] Univ Twente, Inorgan Mat Sci Grp, NL-7500 AE Enschede, Netherlands

来源：

FERROELECTRICS | 2000年 / 241卷 / 1-4期

关键词：

thin films; MOCVD; PZT; ellipsometry; MEMS; integrated-optics devices;

D O I：

10.1080/00150190008224986

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline Pb(Zr, Ti)O-3 thin films have been grown by Metalorganic Chemical Vapor Deposition (MOCVD) technique. The characterization of 200 nm thick polycrystalline Pb(Zr, Ti)O-3 thin films on 6 inch diameter Pt/Ti/SiO2/Si substrates is reported. XRD reveals good crystalline structure with respect to powder standards. Ellipsometry indicates an interface layer due to substrate roughness induced by the heating-up procedure prior to growth. Ellipsometry is a good tool to evaluate the quality of the grown thin films and the thickness of this observed interfacial layer.

引用

页码：149 / 158

页数：10

共 15 条

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