Interfacial layer observed by ellipsometry in MOCVD grown Pb(Zr, Ti)O3 thin films

被引：4
|
作者：
Moret, MP
Rössinger, SA
Hageman, PR
Devillers, MA
Van der Linden, H
Haverkamp, E
Larsen, PK
Duan, N
机构：
[1] Univ Nijmegen, Mat Res Inst, NL-6525 ED Nijmegen, Netherlands
[2] Univ Twente, Inorgan Mat Sci Grp, NL-7500 AE Enschede, Netherlands
来源：
FERROELECTRICS | 2000年 / 241卷 / 1-4期
关键词：
thin films; MOCVD; PZT; ellipsometry; MEMS; integrated-optics devices;
D O I：
10.1080/00150190008224986
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycrystalline Pb(Zr, Ti)O-3 thin films have been grown by Metalorganic Chemical Vapor Deposition (MOCVD) technique. The characterization of 200 nm thick polycrystalline Pb(Zr, Ti)O-3 thin films on 6 inch diameter Pt/Ti/SiO2/Si substrates is reported. XRD reveals good crystalline structure with respect to powder standards. Ellipsometry indicates an interface layer due to substrate roughness induced by the heating-up procedure prior to growth. Ellipsometry is a good tool to evaluate the quality of the grown thin films and the thickness of this observed interfacial layer.
引用
收藏
页码：149 / 158
页数：10
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