MECHANISMS OF PROCESS-INDUCED HEATING OF MEMS STRUCTURES DURING PLASMA RELEASE ETCH

被引：1

作者：

Gilgunn, Peter J. ^{[1
]}

Fedder, Gary K. ^{[1
]}

机构：

[1] Carnegie Mellon Univ, Pittsburgh, PA 15213 USA

来源：

MEMS 2010: 23RD IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2010年

关键词：

BALANCE;

D O I：

10.1109/MEMSYS.2010.5442500

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature rise on suspended MEMS structures during a Si plasma release etch process is investigated experimentally using in situ infrared imaging. The process is performed on a commercially available inductively coupled plasma etch chamber and comprises an anisotropic, Bosch-type Si DRIE step, an O-2 inhibitor removal step and a SF6 isotropic Si etch. Temperatures up to 150 degrees C were observed during the isotropic etch and indicate the exothermic reaction of Si and F is the dominant source of heat. Temperature trends with test structure geometry suggest interplay between radiative cooling and etchant transport determines maximum structure temperature.

引用

页码：320 / 323

页数：4

共 6 条

[1]

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