Femtosecond dynamics in semiconductor lasers: Dark pulse formation

被引：17
作者：
Kauer, M [1 ]
Cleaver, JRA
Baumberg, JJ
Heberle, AP
机构：
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2] Hitachi Cambridge Lab, Cambridge CB3 0HE, England
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 13期
关键词：
D O I：
10.1063/1.121134
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We track the dynamic response of GaAs quantum-well semiconductor diode lasers after injection of a femtosecond pulse, using ultrafast upconversion. The continuous-wave emission shows gain dynamics and relaxation oscillations on timescales of 1-100 ps. The recirculating femtosecond pulse evolves into an ultrafast "dark pulse" in the wake of subpicosecond oscillations. (C) 1998 American Institute of Physics.
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收藏
页码：1626 / 1628
页数：3
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