Femtosecond dynamics in semiconductor lasers: Dark pulse formation

被引：17

作者：

Kauer, M ^{[1
]}

Cleaver, JRA

Baumberg, JJ

Heberle, AP

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Hitachi Cambridge Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 13期

关键词：

D O I：

10.1063/1.121134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We track the dynamic response of GaAs quantum-well semiconductor diode lasers after injection of a femtosecond pulse, using ultrafast upconversion. The continuous-wave emission shows gain dynamics and relaxation oscillations on timescales of 1-100 ps. The recirculating femtosecond pulse evolves into an ultrafast "dark pulse" in the wake of subpicosecond oscillations. (C) 1998 American Institute of Physics.

引用

页码：1626 / 1628

页数：3

共 10 条

[1] SUBPICOSECOND GAIN AND INDEX NONLINEARITIES IN INGAASP DIODE-LASERS [J].

HALL, KL ;

LENZ, G ;

DARWISH, AM ;

IPPEN, EP .

OPTICS COMMUNICATIONS, 1994, 111 (5-6) :589-612

[2] FEMTOSECOND TIME DOMAIN MEASUREMENTS OF GROUP-VELOCITY DISPERSION IN DIODE-LASERS AT 1.5-MU-M [J].

HALL, KL ;

LENZ, G ;

IPPEN, EP .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1992, 10 (05) :616-619

[3] Time-resolved relaxation oscillations in gain-clamped semiconductor optical amplifiers by pump and probe measurements [J].

Hessler, T ;

Haacke, S ;

Pleumeekers, JL ;

Selbmann, PE ;

Dupertuis, MA ;

Deveaud, B ;

Taylor, RA ;

Doussiere, P ;

Bachmann, M ;

Ducellier, T ;

Emery, JY .

QUANTUM AND SEMICLASSICAL OPTICS, 1997, 9 (05) :675-679

[4] Femtosecond self- and cross-phase modulation in semiconductor laser amplifiers [J].

Hong, MY ;

Chang, YH ;

Dienes, A ;

Heritage, JP ;

Delfyett, PJ ;

Dijaili, S ;

Patterson, FG .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1996, 2 (03) :523-539

[5] Role of plasma cooling, heating, and memory effects in subpicosecond pulse propagation in semiconductor amplifiers [J].

Indik, RA ;

Binder, R ;

Mlejnek, M ;

Moloney, JV ;

Hughes, S ;

Knorr, A ;

Koch, SW .

PHYSICAL REVIEW A, 1996, 53 (05) :3614-3620

[6] RELIABILITY OF 780-NM HIGH-POWER LASER-DIODES WITH THIN QUANTUM-WELL ACTIVE LAYER [J].

NAKATSUKA, S ;

YAMASHITA, S ;

UCHIDA, K ;

KAJIMURA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (03) :493-498

[7] GAIN SWITCHING IN HIGH-SPEED SEMICONDUCTOR-LASERS - INTERMEDIATE-SIGNAL ANALYSIS [J].

SCHNEIDER, H ;

RALSTON, JD ;

OREILLY, EP ;

WEISSER, S ;

LARKINS, EC .

APPLIED PHYSICS LETTERS, 1994, 65 (06) :661-663

[8] PICOSECOND SPECTROSCOPY OF OPTICALLY MODULATED HIGH-SPEED LASER-DIODES [J].

SUTTER, DH ;

SCHNEIDER, H ;

WEISSER, S ;

RALSTON, JD ;

LARKINS, EC .

APPLIED PHYSICS LETTERS, 1995, 67 (13) :1809-1811

[9] STUDY OF INTENSITY PULSATIONS IN PROTON-BOMBARDED STRIPE-GEOMETRY DOUBLE-HETEROSTRUCTURE ALXGA1-XAS LASERS [J].

VANDERZIEL, JP ;

MERZ, JL ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4620-4637

[10] HIGH-POWER 780 NM ALGAAS QUANTUM-WELL LASERS AND THEIR RELIABLE OPERATION [J].

YAMASHITA, S ;

NAKATSUKA, S ;

UCHIDA, K ;

KAWANO, T ;

KAJIMURA, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1544-1549

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