Low-voltage bandgap reference with output-regulated current mirror in 90 nm CMOS

被引：8

作者：

Lee, S. ^{[1
]}

Lee, H. ^{[1
]}

Woo, J. -K. ^{[1
]}

Kim, S. ^{[1
]}

机构：

[1] Seoul Natl Univ, Seoul 151744, South Korea

来源：

ELECTRONICS LETTERS | 2010年 / 46卷 / 14期

关键词：

D O I：

10.1049/el.2010.1546

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-voltage bandgap reference (BGR) circuit is designed and fabricated in a 90 nm CMOS technology. To mitigate error resulting from the mismatch in temperature dependency of the current in the output current mirror device and that of the BGR core, an output-regulated current mirror is incorporated. Experimental results show that the output voltage is 497.2 mV at 25 degrees C with a temperature coefficient of 28.3 ppm/degrees C between -40 degrees C and 80 degrees C. The circuit occupies 0.0337 mm(2) and dissipates 276.6 pW with a supply voltage of 1.2 V.

引用

页码：976 / U34

页数：2

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