The anisotropy of hexagonal close-packed and liquid interface free energy using molecular dynamics simulations based on modified embedded-atom method

被引:35
作者
Asadi, Ebrahim [1 ]
Zaeem, Mohsen Asle [2 ]
机构
[1] Univ Memphis, Dept Mech Engn, Memphis, TN 38152 USA
[2] Missouri Univ Sci & Technol, Dept Mat Sci & Engn, Rolla, MO 65409 USA
基金
美国国家科学基金会;
关键词
Interface free energy; Spherical harmonics; MEAM; Hexagonal close-packed; Magnesium; SURFACE-TENSION; DENDRITIC SOLIDIFICATION; DISTRIBUTIONS; IMPURITIES; POTENTIALS;
D O I
10.1016/j.actamat.2016.01.043
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This work aims to comprehensively study the anisotropy of the hexagonal close-packed (HCP)-liquid interface free energy using molecular dynamics (MD) simulations based on the modified-embedded atom method (MEAM). As a case study, all the simulations are performed for Magnesium (Mg). The solid-liquid coexisting approach is used to accurately calculate the melting point and melting properties. Then, the capillary fluctuation method (CFM) is used to determine the HCP-liquid interface free energy (gamma) and anisotropy parameters. In CFM, a continuous order parameter is employed to accurately locate the HCP-liquid interface location, and the HCP symmetry-adapted spherical harmonics are used to expand gamma in terms of its anisotropy parameters (epsilon(20), epsilon(40), epsilon(60) and epsilon(66)). Eight slip and twinning planes (basal, two prismatic, two pyramidal, and three twinning planes) are considered as the HCP-liquid interface planes. An average HCP-liquid interface free energy of 122.2 (mJ/m(2)), non-zero epsilon(20), epsilon(40), and epsilon(66) parameters, and approximately zero epsilon(60) parameter for Mg are predicted. Using these findings, the first preferred dendrite growth direction in solidification of Mg is predicted as [11 (2) over bar0], which is in agreement with experiments. Also, a second preferred dendrite growth direction for Mg is predicted as [33 (6) over bar2]. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:337 / 344
页数:8
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