Hydrogen effects on crystallinity, photoluminescence, and magnetization of indium tin oxide thin films sputter-de posited on glass substrate without heat treatment

被引:26
|
作者
Luo, Suning [1 ,2 ]
Kohiki, Shigemi [1 ]
Okada, Koichi [1 ]
Shoji, Fumiya [3 ]
Shishido, Toetsu [4 ]
机构
[1] Kyushu Inst Technol, Dept Mat Sci, Kitakyushu, Fukuoka 8048550, Japan
[2] Liaoning Inst Technol, Jinzhou, Peoples R China
[3] Kyushu Kyoritsu Univ, Kitakyushu, Fukuoka 8078585, Japan
[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9809577, Japan
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 02期
关键词
TRANSPARENT CONDUCTING OXIDES; IN2O3; NANOWIRES; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; ITO FILMS; TEMPERATURE; FABRICATION; DEPOSITION; GAS;
D O I
10.1002/pssa.200925375
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Indium tin oxide (ITO) thin films were sputter deposited by using working gas containing hydrogen on glass substrate without any heat treatments. The films demonstrated X-ray diffraction due to polycrystalline ITO, blue-green photo-luminescence (PL) due to oxygen defects in nano-structured ITO crystals, and paramagnetic behavious in temperature dependence of magnetization overlapped with diamagnetic signal from the substrate, The carrier density n of the films was of the order of 10(20) cm(-3), and varied as an inverse of V character the hydrogen concentration [H] in the gas . The n value peaked at [H] = 1% spectral features at approximate to 430 and approximate to 470 nm of the pL emission were invariant with [H] . The order of the density of electron N with spins obeying the Curie law was 10 cm and the variation with [H] was almost parallel of that in n with [H] (C) WILEY-VCH Verlag GmbH & Co. KGaA, weinheim
引用
收藏
页码:386 / 390
页数:5
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