First operation of a pixel imaging matrix based on DEPFET pixels

被引:11
|
作者
Fischer, P
Kemmer, J
Klein, P
Löcker, M
Lutz, G
Neeser, W
Strüder, L
Wermes, N
机构
[1] Univ Bonn, Inst Phys, D-53115 Bonn, Germany
[2] Max Planck Inst, Halbleiterlab, Munich, Germany
[3] Univ Dortmund, D-44221 Dortmund, Germany
关键词
DEPFET; pixel detector; autoradiography; silicon detector; imaging;
D O I
10.1016/S0168-9002(00)00342-9
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In the DEPFET pixel concept the detected incident radiation is directly sensed and amplified by a JFET integrated in every pixel cell. While the DEPFET detector principle has already been demonstrated previously on single pixel structures, we present here the first successful operation of a large 32 x 32 DEPFET pixel matrix as an imaging device. The matrix has been exposed to 60 keV gamma rays of a (241) Am source and has been scanned using an IR laser. The principle of operation as well as the charge collection in the structure and possible improvements are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:651 / 656
页数:6
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