Utilizing a Spiro Core with Acridine- and Phenothiazine-Based New Hole Transporting Materials for Highly Efficient Green Phosphorescent Organic Light-Emitting Diodes

被引:9
作者
Braveenth, Ramanaskanda [1 ]
Bae, Il-Ji [2 ]
Han, Ji-Hun [1 ]
Qiong, Wu [1 ]
Seon, Guk [1 ]
Raagulan, Kanthasamy [1 ]
Yang, Kihun [1 ]
Park, Young Hee [1 ]
Kim, Miyoung [2 ]
Chai, Kyu Yun [1 ]
机构
[1] Wonkwang Univ, Coll Nat Sci, Div Bionanochem, Iksan 570749, Chonbuk, South Korea
[2] Korea Elect Technol Inst, Nanoconvergence Res Ctr, Jeonju 54853, South Korea
关键词
organic light-emitting diodes; spirobifluorene; hole transporting materials; green phosphorescence; phenothiazine; acridine; GLASS-TRANSITION TEMPERATURES; ELECTROLUMINESCENT DIODES; SPIROBIFLUORENE CORE; THERMAL-STABILITY; DEVICES; DERIVATIVES; CARBAZOLE; OLEDS; TRIARYLDIAMINES; OPTOELECTRONICS;
D O I
10.3390/molecules23040713
中图分类号
Q5 [生物化学]; Q7 [分子生物学];
学科分类号
071010 ; 081704 ;
摘要
Two new hole transporting materials, 2,7-bis(9,9-diphenylacridin- 10(9H)-yl)-9,9' spirobi [fluorene] (SP1) and 2,7-di(10H-phenothiazin-10-yl)-9,9'-spirobi[fluorene] (SP2), were designed and synthesized by using the Buchwald-Hartwig coupling reaction with a high yield percentage of over 84%. Both of the materials exhibited high glass transition temperatures of over 150 degrees C. In order to understand the device performances, we have fabricated green phosphorescent organic light-emitting diodes (PhOLEDs) with SP1 and SP2 as hole transporting materials. Both of the materials revealed improved device properties, in particular, the SP2-based device showed excellent power (34.47 lm/W) and current (38.41 cd/A) efficiencies when compare with the 4,4'-bis(N-phenyl-1-naphthylamino) biphenyl (NPB)-based reference device (30.33 lm/Wand 32.83 cd/A). The external quantum efficiency (EQE) of SP2 was 13.43%, which was higher than SP1 (13.27%) and the reference material (11.45%) with a similar device structure. The SP2 hole transporting material provides an effective charge transporting path from anode to emission layer, which is explained by the device efficiencies.
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页数:11
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