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Utilizing a Spiro Core with Acridine- and Phenothiazine-Based New Hole Transporting Materials for Highly Efficient Green Phosphorescent Organic Light-Emitting Diodes
被引:9
作者:
Braveenth, Ramanaskanda
[1
]
Bae, Il-Ji
[2
]
Han, Ji-Hun
[1
]
Qiong, Wu
[1
]
Seon, Guk
[1
]
Raagulan, Kanthasamy
[1
]
Yang, Kihun
[1
]
Park, Young Hee
[1
]
Kim, Miyoung
[2
]
Chai, Kyu Yun
[1
]
机构:
[1] Wonkwang Univ, Coll Nat Sci, Div Bionanochem, Iksan 570749, Chonbuk, South Korea
[2] Korea Elect Technol Inst, Nanoconvergence Res Ctr, Jeonju 54853, South Korea
来源:
关键词:
organic light-emitting diodes;
spirobifluorene;
hole transporting materials;
green phosphorescence;
phenothiazine;
acridine;
GLASS-TRANSITION TEMPERATURES;
ELECTROLUMINESCENT DIODES;
SPIROBIFLUORENE CORE;
THERMAL-STABILITY;
DEVICES;
DERIVATIVES;
CARBAZOLE;
OLEDS;
TRIARYLDIAMINES;
OPTOELECTRONICS;
D O I:
10.3390/molecules23040713
中图分类号:
Q5 [生物化学];
Q7 [分子生物学];
学科分类号:
071010 ;
081704 ;
摘要:
Two new hole transporting materials, 2,7-bis(9,9-diphenylacridin- 10(9H)-yl)-9,9' spirobi [fluorene] (SP1) and 2,7-di(10H-phenothiazin-10-yl)-9,9'-spirobi[fluorene] (SP2), were designed and synthesized by using the Buchwald-Hartwig coupling reaction with a high yield percentage of over 84%. Both of the materials exhibited high glass transition temperatures of over 150 degrees C. In order to understand the device performances, we have fabricated green phosphorescent organic light-emitting diodes (PhOLEDs) with SP1 and SP2 as hole transporting materials. Both of the materials revealed improved device properties, in particular, the SP2-based device showed excellent power (34.47 lm/W) and current (38.41 cd/A) efficiencies when compare with the 4,4'-bis(N-phenyl-1-naphthylamino) biphenyl (NPB)-based reference device (30.33 lm/Wand 32.83 cd/A). The external quantum efficiency (EQE) of SP2 was 13.43%, which was higher than SP1 (13.27%) and the reference material (11.45%) with a similar device structure. The SP2 hole transporting material provides an effective charge transporting path from anode to emission layer, which is explained by the device efficiencies.
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页数:11
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