Electromigration in 3D-IC scale Cu/Sn/Cu solder joints

被引：29
作者：
Ho, Cheng-En [1 ]
Lee, Pei-Tzu [1 ]
Chen, Chih-Nan [1 ]
Yang, Cheng-Hsien [1 ]
机构：
[1] Yuan Ze Univ, Dept Chem Engn & Mat Sci, Taoyuan 32003, Taiwan
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2016年 / 676卷
关键词：
Electromigration; 3D-IC solder joints; Cu/Sn/Cu; Sn orientation; Grain boundary orientation; Cu6Sn5; SINGLE-CRYSTAL TIN; SN ORIENTATION; DIFFUSION; CU; ANISOTROPY; GOLD; AG; EVOLUTION; KINETICS; GROWTH;
D O I：
10.1016/j.jallcom.2016.03.134
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The electromigration effect on the three-dimensional integrated circuits (3D-IC) scale solder joints with a Cu/Sn(25-50 mu m)/Cu configuration was investigated using a field-emission scanning electron microscope (FE-SEM) combined with electron backscatter diffraction (EBSD) analysis system. Electron current stressing for a few days caused the pronounced accumulation of Cu6Sn5 in specific Sn grain boundaries (GBs). The EBSD analysis indicated that both the beta-Sn crystallographic orientation and GB orientation play dominant roles in this accumulation. The dependencies of the Cu6Sn5 accumulation on the two above factors (i.e., Sn grain orientation and GB orientation) can be well rationalized via a proposed mathematic model based on the Huntington and Grone's electromigration theory with the Cu anisotropic diffusion data in a beta-Sn lattice. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：361 / 368
页数：8
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