Interfacial intermixing and anti-phase boundaries in GaP/Si (001) heterostructures

被引：1

作者：

Boley, Allison ^{[1
]}

Luna, Esperanza ^{[2
]}

Zhang, C. ^{[3
]}

Faleev, N. ^{[3
,4
]}

Honsberg, C. B. ^{[3
]}

Smith, David J. ^{[1
]}

机构：

[1] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[2] Leibniz Inst Forsch Verbund Berlin eV, Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany

[3] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[4] RAS, Ioffe Phys Tech Inst, St Petersburg, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2021年 / 562卷 / 562期

基金：

美国国家科学基金会;

关键词：

A1; Characterization; Crystal structure; A3; Molecular beam epitaxy; B2; Semiconducting materials; GROWTH; SILICON; SI;

D O I：

10.1016/j.jcrysgro.2021.126059

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial GaP/Si heterostructures grown by molecular beam epitaxy (MBE) and migration-enhanced epitaxy (MEE) have been studied, primarily using aberration-corrected scanning transmission electron microscopy (ACSTEM). Atomically-resolved structure images, which are sensitive to atomic-column intensity revealed the detailed geometry of antiphase boundaries that were both parallel and also inclined to the growth direction. The polar/non-polar GaP/Si interfaces were neither atomically flat laterally nor abrupt vertically. Measurements of intensity profiles using both bright-field and dark-field AC-STEM images, as well as chemically-sensitive g002 dark-field imaging, indicated substantial interfacial intermixing, which increased significantly from -1.3 nm (MEE growth at 440 ?C) to -2.1 nm (MBE growth at 600 ?C). The finite interface width will impact theoretical predictions of charge imbalance and strong electric fields across the heterointerface.

引用

页数：7

共 28 条

[1]

[Anonymous], 2001, New Semiconductor Materials. Characteristics and Properties

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