Extreme ultraviolet lithography's path to manufacturing

被引：33

作者：

Levinson, Harry J. ^{[1
]}

机构：

[1] GLOBALFOUNDRIES, Sunnyvale, CA 94085 USA

来源：

JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2009年 / 8卷 / 04期

关键词：

lithography; extreme ultraviolet (EUV); masks; X-RAY-LITHOGRAPHY; CHEMICALLY AMPLIFIED RESIST; ACID DIFFUSION; CONTAMINATION; FABRICATION; HISTORY; OPTICS; IBM;

D O I：

10.1117/1.3273965

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The origins of extreme ultraviolet (EUV) lithography and its progress toward readiness for manufacturing are recounted. Source power and reliability and mask defects are known items requiring additional improvement before EUV lithography will be suitable for use in the volume manufacturing of integrated circuits. Additional cycles of learning, as obtained from pilot line operation, will greatly accelerate the maturation of EUV lithography and enable its use in manufacturing as early as 2013. (C) 2009 Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.3273965]

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