Electromodulation of the magnetoresistance in diluted magnetic semiconductors based heterostructures

被引：5

作者：

López-Sancho, MP ^{[1
]}

Muñoz, MC ^{[1
]}

Brey, L ^{[1
]}

机构：

[1] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain

来源：

SOLID STATE COMMUNICATIONS | 2003年 / 125卷 / 01期

关键词：

GaMnAs; diluted magnetic semiconductor; semiconductor heterostructure;

D O I：

10.1016/S0038-1098(02)00622-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We study the properties of heterostructures formed by two layers of a diluted magnetic semiconductor separated by a nonmagnetic semiconductor layer. We find that there is a RKKY-type exchange coupling between the magnetic layers that oscillates between ferromagnetic and antiferromagnetic as a function of the different parameters in the problem. The different transport properties of these phases make that this heterostructure presents strong magnetoresistive effects. The coupling can be also modified by an electric field. We propose that it is possible to alter dramatically the electrical resistance of the heterostructure by applying an electric field. Our results indicate that in a single gated sample the magnetoresistance could be modulated by an electrical bias voltage. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：31 / 35

页数：5