A projection-type excimer-laser crystallization system for ultra-large grain growth of Si thin-films

被引：0

作者：

Oh, CH ^{[1
]}

Nakata, M ^{[1
]}

Matsumura, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528550, Japan

来源：

FLAT-PANEL DISPLAYS AND SENSORS: PRINCIPLES, MATERIALS AND PROCESSES | 2000年 / 558卷

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We have proposed a new excimer-laser crystallization system based on an optical projection concept. In the proposed system, a collimated excimer-laser light pulse is irradiated to Si thin-films on a glassy substrate, through a phase-shift mask and an optical lens system. Using one-and two-dimensional phase-shift masks, we have examined feasibility of the proposed method.

引用

页码：187 / 192

页数：4

共 8 条

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[5] 2-L
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