Growth mechanism of the Pd(100)-p(2x2)-p4g-Al surface alloy

被引:8
|
作者
Kishi, K [1 ]
Oka, A [1 ]
Takagi, N [1 ]
Nishijima, M [1 ]
Aruga, T [1 ]
机构
[1] Kyoto Univ, Grad Sch Sci, Dept Chem, Kyoto 6068502, Japan
关键词
alloys; aluminum; growth; palladium; scanning tunneling microscopy; surface structure; morphology; roughness; and topography;
D O I
10.1016/S0039-6028(00)00567-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have studied the growth mechanism of a Pd(100)-p(2 x 2)-p4g-Al surface alloy by scanning tunneling microscopy (STM). The surface alloy has a bilayer structure and is formed by annealing at 450-700 It (depending on the initial aluminum coverage) after the deposition of aluminum on Pd(100) at room temperature. The ratio of the surface-alloy coverage to the initial aluminum coverage is found to be constant (0.44) irrespective of the initial aluminum coverage from similar to 0.5 monolayers (ML) up to similar to 2 ML. The growth mechanism of the surface alloy is proposed on the basis of the STM measurements at various annealing temperatures. Upon annealing at 450 K, some of the surface aluminum atoms migrate into the bulk and, instead, palladium atoms come out to the surface. These palladium atoms react with aluminum atoms remaining on the surface to form a surface alloy. When the initial aluminum coverage is less than 1 ML, bilayer-high islands of the surface alloy with an average area of similar to 100 nm(2) are formed at 450-500 K, which diffuse on the terrace at 500-700 K and coalesce to form larger islands. A possible role of the percolation transition of aluminum islands in the formation of the surface alloy is discussed. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:264 / 276
页数:13
相关论文
共 50 条
  • [31] STM study of Pd growth on TiO2(100)-(1x3)
    Murray, PW
    Shen, J
    Condon, NG
    Pang, SJ
    Thornton, G
    SURFACE SCIENCE, 1997, 380 (01) : L455 - L458
  • [32] LEED structural determination of the c(2x2) Si/Cu(110) surface alloy
    Polop, C
    Rojas, C
    Roman, E
    Martin-Gago, JA
    Brena, B
    Cocco, D
    Paolucci, G
    SURFACE SCIENCE, 1998, 407 (1-3) : 268 - 274
  • [33] Photoelectron diffraction study of the Si2p surface-core-level-shift of the Si(001)(1 x 2)-Sb surface
    Shimomura, M
    Abukawa, T
    Yoshimura, K
    Oh, JH
    Yeom, HW
    Kono, S
    SURFACE SCIENCE, 2001, 493 (1-3) : 23 - 28
  • [34] The structure of the Ni(100)c(2x2)-N2 surface:: a chemical-state-specific scanned-energy mode photoelectron diffraction determination
    Sayago, DI
    Kittel, M
    Hoeft, JT
    Polcik, M
    Pascal, M
    Lamont, CLA
    Toomes, RL
    Robinson, J
    Woodruff, DP
    SURFACE SCIENCE, 2003, 538 (1-2) : 59 - 75
  • [35] Electronic structure of p(2 x 3) Ag films on Si(100)
    Kim, Soon-Ki
    Kim, Jae-Sung
    Lee, Geunseop
    Nogami, Jun
    Kong, Ki-jeong
    Yu, Byung Deok
    Ahn, Doyeol
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013, 62 (01) : 86 - 91
  • [36] Oxygen-induced surface core-level shift and angle-resolved X-ray photoemission spectroscopy of c(2x2)O/Pd(100)
    Park, KT
    Simmons, GW
    Klier, K
    SURFACE SCIENCE, 1996, 367 (03) : 307 - 320
  • [37] Low coverage p(2 x 2) iodide phase on Cu(100)
    Hommes, A
    Spaenig, A
    Broekmann, P
    Wandelt, K
    SURFACE SCIENCE, 2003, 547 (1-2) : 239 - 247
  • [38] Growth of In nanocrystallite arrays on the Si(100)-c(4 x 12)-Al surface
    Gruznev, D. V.
    Olyanich, D. A.
    Avilov, V. A.
    Saranin, A. A.
    Zotov, A. V.
    SURFACE SCIENCE, 2006, 600 (22) : 4986 - 4991
  • [39] CoSi2 on Si(100): LEED investigations of the c(2x2) and (2 root 2x root 2) phases and comparison to a bulk crystal CoSi2(100) surface
    Starke, U
    Weiss, W
    Rangelov, G
    Fauster, T
    Castro, GR
    Heinz, K
    SURFACE SCIENCE, 1996, 352 : 89 - 93
  • [40] Si(001) c(4 x 2)-p(2 x 2) surface phase transitions induced by electric fields and doping
    Schmidt, W. G.
    Seino, K.
    CURRENT APPLIED PHYSICS, 2006, 6 (03) : 331 - 333