Tin doping in spray pyrolysed indium sulfide thin films for solar cell applications

被引：58

作者：

Mathew, Meril ^{[1
]}

Gopinath, Manju ^{[1
]}

Kartha, C. Sudha ^{[1
]}

Vijayakumar, K. P. ^{[1
]}

Kashiwaba, Y. ^{[2
]}

Abe, T. ^{[2
]}

机构：

[1] Cochin Univ Sci & Technol, Dept Phys, Kochi 682022, India

[2] Iwate Univ, Dept Elect & Elect Engn, Morioka, Iwate 020855, Japan

来源：

SOLAR ENERGY | 2010年 / 84卷 / 06期

关键词：

Indium sulfide; Thin film solar cell; Buffer layer; Tin doping; Spray pyrolysis; BETA-IN2S3; EFFICIENCY; EVOLUTION; LAYER; VAPOR;

D O I：

10.1016/j.solener.2010.01.030

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper presents studies carried out on tin-doped indium sulfide films prepared using Chemical Spray Pyrolysis (CSP) technique. Effect of both in-situ and ex-situ doping were analyzed. Ex-situ doping was done by thermal diffusion, which was realized by annealing Sn/In2S3 bilayer films. In-situ doping was accomplished by introducing Sn into the spray solution by using SnCl4.5H(2)O. Interestingly, it was noted that by ex-situ doping, conductivity of the sample enhanced considerably without affecting any of the physical properties such as crystallinity or band gap. Analysis also showed that higher percentage of doping resulted in samples with low crystallinity and negative photosensitivity. In-situ doping resulted in amorphous films. In contrast to ex-situ doping, 'in- situ doping' resulted in widening of optical band gap through oxygen incorporation; also it gave highly photosensitive films. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：888 / 897

页数：10

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