Material and solar cell research in microcrystalline silicon

被引:356
作者
Shah, A [1 ]
Meier, J [1 ]
Vallat-Sauvain, E [1 ]
Wyrsch, N [1 ]
Kroll, U [1 ]
Droz, C [1 ]
Graf, U [1 ]
机构
[1] Univ Neuchatel, Inst Microtechnol, CH-2000 Neuchatel, Switzerland
关键词
microcrystalline silicon; plasma deposition; material properties; electronic transport; single-junction solar cells; tandem solar cells;
D O I
10.1016/S0927-0248(02)00448-8
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
This contribution describes the introduction of hydrogenated microcrystalline silicon (muc-Si:H) as novel absorber material for thin-film silicon solar cells. Work done at IMT Neuchatel in connection with deposition of pc-Si:H layers by very high frequency glow discharge deposition is related in detail. Corresponding layer properties w.r.t. material microstructure, hydrogen content, stability and electronic transport are referred to. Basic properties of single-junction, entirely microcrystalline, thin-film silicon solar cells are related: Spectral response, stability w.r.t. light-induced degradation, basic solar cell parameters (V c, J(sc) and FF) obtained by IMT Neuchatel and by other laboratories are listed and commented; the deposition rate issue is addressed. Finally, microcrystalline/amorphous, i.e. "micromorph" silicon tandem solar cells, are described, together with recent developments on the research and industrial front. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:469 / 491
页数:23
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