Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs

被引：21

作者：

Lancry, O. ^{[1
]}

Pichonat, E. ^{[1
]}

Rehault, J. ^{[1
]}

Moreau, M. ^{[1
]}

Aubry, R. ^{[2
]}

Gaquiere, C. ^{[3
]}

机构：

[1] Univ Sci & Technol Lille, UMR CNRS 8516, LASIR, F-59655 Villeneuve Dascq, France

[2] Alcatel Thales III V Lab, F-91461 Marcoussis, France

[3] IEMN, UMR CNRS 8520, F-59652 Villeneuve Dascq, France

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 11期

关键词：

AlGaN/GaN; High-electron mobility transistors (HEMTs); Micro-Raman Spectroscopy; Self-heating effects; Time-resolved; Ultraviolet laser; GAN; SCATTERING; DEVICES;

D O I：

10.1016/j.sse.2010.05.029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the development of Time-resolved Ultraviolet Micro-Raman Scattering to measure transient self-heating effects in semiconductor devices. Temperature measurements are performed on AlGaN/GaN High-electron-mobility transistors (HEMTs) grown on SiC substrate. Ultraviolet excitation probes the temperature close to the AlGaN/GaN interface, in the two-dimensional electron gas (2DEG) region. This new measurement setup allows us to obtain a temporal, spectral and measured spatial resolution of 200 ns, 0.8 cm(-1) and 1.7 mu m respectively. The temperature accuracy is better than 5-10 K. Temperature evolution as function of time has been studied. Self-heating effects are immediately observed. A fast thermal response is demonstrated during the first microsecond after switching the device ON then, a slower thermal response is established during the second microsecond. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1434 / 1437

页数：4

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