GaN as a radiation hard particle detector

被引:73
作者
Grant, J. [1 ]
Bates, R.
Cunningham, W.
Blue, A.
Melone, J.
McEwan, F.
Vaitkus, J.
Gaubas, E.
O'Shea, V.
机构
[1] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland
[2] Vilnius State Univ, Inst Mat Sci & Appl Res, LT-2040 Vilnius, Lithuania
关键词
detector; GaN; nitrides; radiation hardness; radiation detection; SLHC; irradiation;
D O I
10.1016/j.nima.2007.01.121
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Semiconductor tracking detectors at experiments such as ATLAS and LHCb at the CERN Large Hadron Collider (LHC) will be subjected to intense levels of radiation. The proposed machine upgrade, the Super-LHC (SLHC), to 10 times the initial luminosity of the LHC will require detectors that are ultra-radiation hard. Much of the current research into finding a detector that will meet the requirements of the SLHC has focused on using silicon substrates with enhanced levels of oxygen, for example Czochralski silicon and diffusion oxygenated float zone silicon, and into novel detector structures such as 3D devices. Another avenue currently being investigated is the use of wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN). Both SiC and GaN should be intrinsically more radiation hard than silicon. Pad and guard ring structures were fabricated on three epitaxial GaN wafers. The epitaxial GaN thickness was either 2.5 or 12 mu m and the fabricated detectors were irradiated to various fluences with 24 GeV/c protons and 1 MeV neutrons. Detectors were characterised pre- and post-irradiation by performing current-voltage (I-V) and charge collection efficiency (CCE) measurements. Devices fabricated on 12 mu m epitaxial GaN irradiated to fluences of 1 016 protons cm(-2) and 10(16) neutrons cm(-2) show maximum CCE values of 26% and 20%, respectively, compared to a maximum CCE of 53% of the unirradiated device. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:60 / 65
页数:6
相关论文
共 17 条
[1]   Radiation-hard semiconductor detectors for SuperLHC [J].
Bruzzi, M ;
Adey, J ;
Al-Ajili, A ;
Alexandrov, P ;
Alfieri, G ;
Allport, PP ;
Andreazza, A ;
Artuso, M ;
Assouak, S ;
Avset, BS ;
Barabash, L ;
Baranova, E ;
Barcz, A ;
Basile, A ;
Bates, R ;
Belova, N ;
Biagi, SF ;
Bilei, GM ;
Bisello, D ;
Blue, A ;
Blumenau, B ;
Boisvert, V ;
Bolla, G ;
Bondarenko, G ;
Borchi, E ;
Borrello, L ;
Bortoletto, D ;
Boscardin, M ;
Bosisio, L ;
Bowcock, TJV ;
Brodbeck, TJ ;
Broz, J ;
Brukhanov, A ;
Brzozowski, A ;
Buda, M ;
Buhmann, P ;
Buttar, C ;
Campabadal, F ;
Campbell, D ;
Candelori, A ;
Casse, G ;
Cavallini, A ;
Chilingarov, A ;
Chren, D ;
Cindro, V ;
Citterio, M ;
Collins, P ;
Coluccia, R ;
Contarato, D ;
Coutinho, J .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2005, 541 (1-2) :189-201
[2]   Deep levels by proton and electron irradiation in 4H-SiC [J].
Castaldini, A ;
Cavallini, A ;
Rigutti, L ;
Nava, F ;
Ferrero, S ;
Giorgis, F .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (05)
[3]   Performance of irradiated bulk SiC detectors [J].
Cunningham, W ;
Melone, J ;
Horn, M ;
Kazukauskas, V ;
Roy, P ;
Doherty, F ;
Glaser, M ;
Vaitkus, J ;
Rahman, M .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 509 (1-3) :127-131
[4]  
FERTWURST E, 2005, RD50 HELS JUN
[5]   Wide bandgap semiconductor detectors for harsh radiation environments [J].
Grant, J ;
Cunningham, W ;
Blue, A ;
O'Shea, V ;
Vaitkus, J ;
Gaubas, E ;
Rahman, M .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2005, 546 (1-2) :213-217
[6]   Particle detectors made of high-resistivity Czochralski silicon [J].
Härkönen, J ;
Tuovinen, E ;
Luukka, P ;
Tuominen, E ;
Li, Z ;
Ivanov, A ;
Verbitskaya, E ;
Eremin, V ;
Pirojenko, A ;
Riihimaki, I ;
Virtanen, A .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2005, 541 (1-2) :202-207
[7]   Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency [J].
Khan, MA ;
Chen, Q ;
Shur, MS ;
Dermott, BT ;
Higgins, JA ;
Burm, J ;
Schaff, W ;
Eastman, LF .
ELECTRONICS LETTERS, 1996, 32 (04) :357-358
[8]   Radiation damage in silicon detectors [J].
Lindström, G .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 512 (1-2) :30-43
[9]   Radiation tolerant semiconductor sensors for tracking detectors [J].
Moll, Michael .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2006, 565 (01) :202-211
[10]   CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].
NAKAMURA, S ;
MUKAI, T ;
SENOH, M .
APPLIED PHYSICS LETTERS, 1994, 64 (13) :1687-1689