Microscopic optical nonlinearities and transient carrier dynamics in indium selenide nanosheet

被引:10
|
作者
Chen, Chenduan [1 ,2 ]
Dong, Ningning [1 ,2 ,3 ,4 ]
Huang, Jiawei [5 ,6 ]
Wang, Zixin [1 ,2 ]
Wang, Jun [1 ,2 ,3 ,4 ]
机构
[1] Chinese Acad Sci, Lab Micronano Optoelect Mat & Devices, Key Lab Mat High Power Laser, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] CAS Ctr Excellence Ultraintense Laser Sci CEULS, Shanghai 201800, Peoples R China
[4] Chinese Acad Sci, State Key Lab High Field Laser Phys, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
[5] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
[6] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
TEMPERATURE-DEPENDENT RAMAN; 2-PHOTON ABSORPTION; BIOMEDICAL APPLICATIONS; ELECTRON-MOBILITY; LAYER; GRAPHENE; MOS2; WS2; SATURATION; BANDGAP;
D O I
10.1364/OE.459023
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
This work systematically investigates the third-order nonlinear optical (NLO) properties and ultrafast carrier dynamics of layered indium selenide (InSe) obtained by mechanical exfoliation (ME). The two-photon absorption (TPA) effect of layered InSe was tested using micro-Z/I-scan techniques. The results indicate that InSe flakes undergo the TPA response under the excitation of both 520 nm and 1040 nm fs pulses, and that InSe is more likely to achieve TPA saturation under visible light excitation. Furthermore, ultrafast carrier dynamics revealed that InSe flakes in the visible region undergo a transition from photoinduced absorption to photobleaching and exhibit a fast recombination time of similar to 0.4-1ps, suggesting a high optical modulation speed as high as similar to 1-2.5 THz. (c) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码:17967 / 17979
页数:13
相关论文
共 38 条
  • [31] Carrier Dynamics and Transfer across the CdS/MoS2 Interface upon Optical Excitation
    Cheng, Kai
    Wang, Han
    Bang, Junhyeok
    West, Damien
    Zhao, Jijun
    Zhang, Shengbai
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2020, 11 (16): : 6544 - 6550
  • [32] Ultrafast Dynamics of Defect-Assisted Carrier Capture in MoS2 Nanodots Investigated by Transient Absorption Spectroscopy
    Ke, Da
    Sui, Lai-zhi
    Liu, Dun-li
    Cui, Jian-qiu
    Zhang, Yun-feng
    Li, Qing-yi
    Li, Su-yu
    Jiang, Yuan-fei
    Chen, An-min
    Song, Jun-ling
    Jin, Ming-xing
    CHINESE JOURNAL OF CHEMICAL PHYSICS, 2018, 31 (03) : 277 - 283
  • [33] Electronic energy levels and carrier dynamics in InAs/InGaAs dots-in-a-well structure investigated by optical spectroscopy
    Chen, Rui
    Liu, H. Y.
    Sun, H. D.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (01)
  • [34] Defect-Mediated Charge Carrier Recombination of Zinc-Silver-Indium Sulfide QDs in the Presence of Naphthoquinone Derivatives: An Insight into the Interfacial Surface Dynamics
    Sarkar, Moloy
    Preeyanka, Naupada
    Goswami, Tanmay
    Saha, Ramchandra
    Akhuli, Amit
    Dehury, Asish K.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2022, : 15838 - 15848
  • [35] Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3
    Jnawali, Giriraj
    Zinser, Samuel
    Shojaei, Iraj Abbasian
    Pournia, Seyyedesadaf
    Jackson, Howard E.
    Smith, Leigh M.
    Need, Ryan F.
    Wilson, Stephen D.
    NANO LETTERS, 2018, 18 (09) : 5875 - 5884
  • [36] Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots
    Khanonkin, I.
    Mishra, A. K.
    Karni, O.
    Mikhelashvili, V.
    Banyoudeh, S.
    Schnabel, F.
    Sichkovskyi, V.
    Reithmaier, J. P.
    Eisenstein, G.
    AIP ADVANCES, 2017, 7 (03)
  • [37] Heterointerface-enhanced ultrafast carrier dynamics and nonlinear optical response via constructing electronic structure-induced type-I ZnO-MoS2 n-n heterojunction
    Liu, Hai-Quan
    Yao, Cheng-Bao
    Liu, Xiao-Jie
    Jiang, Cai-Hong
    APPLIED SURFACE SCIENCE, 2022, 580
  • [38] Direct Probing of Carrier Behavior in Electroluminescence Indium-Zinc-Oxide/N,N′-Di-[(1-naphthyl)-N,N′-diphenyl]-(1,1′-biphenyl)-4,4′-diamine/Tris(8-hydroxy-quinolinato)aluminum(III)/LiF/Al Diode by Time-Resolved Optical Second-Harmonic Generation
    Taguchi, Dai
    Zhang, Le
    Li, Jun
    Weis, Martin
    Manaka, Takaaki
    Iwamoto, Mitsumasa
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)