Microscopic optical nonlinearities and transient carrier dynamics in indium selenide nanosheet

被引:10
|
作者
Chen, Chenduan [1 ,2 ]
Dong, Ningning [1 ,2 ,3 ,4 ]
Huang, Jiawei [5 ,6 ]
Wang, Zixin [1 ,2 ]
Wang, Jun [1 ,2 ,3 ,4 ]
机构
[1] Chinese Acad Sci, Lab Micronano Optoelect Mat & Devices, Key Lab Mat High Power Laser, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] CAS Ctr Excellence Ultraintense Laser Sci CEULS, Shanghai 201800, Peoples R China
[4] Chinese Acad Sci, State Key Lab High Field Laser Phys, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
[5] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
[6] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
TEMPERATURE-DEPENDENT RAMAN; 2-PHOTON ABSORPTION; BIOMEDICAL APPLICATIONS; ELECTRON-MOBILITY; LAYER; GRAPHENE; MOS2; WS2; SATURATION; BANDGAP;
D O I
10.1364/OE.459023
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
This work systematically investigates the third-order nonlinear optical (NLO) properties and ultrafast carrier dynamics of layered indium selenide (InSe) obtained by mechanical exfoliation (ME). The two-photon absorption (TPA) effect of layered InSe was tested using micro-Z/I-scan techniques. The results indicate that InSe flakes undergo the TPA response under the excitation of both 520 nm and 1040 nm fs pulses, and that InSe is more likely to achieve TPA saturation under visible light excitation. Furthermore, ultrafast carrier dynamics revealed that InSe flakes in the visible region undergo a transition from photoinduced absorption to photobleaching and exhibit a fast recombination time of similar to 0.4-1ps, suggesting a high optical modulation speed as high as similar to 1-2.5 THz. (c) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码:17967 / 17979
页数:13
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