GaN property evolution at all stages of MOVPE Si/N treatment growth

被引：16
作者：
Halidou, I. [1 ]
Benzarti, Z. [1 ]
Fitouri, H. [1 ]
Fathallah, W. [1 ]
El Jani, B. [1 ]
机构：
[1] Fac Sci, URHEA, Monastir 5000, Tunisia
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1 | 2007年 / 4卷 / 01期
关键词：
D O I：
10.1002/pssc.200673532
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
An investigation of MOVPE GaN growth on sapphire (0001) using SUN treatment is reported. The growth was monitored in situ He-Ne laser reflectometry. By fitting the reflectivity signal, we derived expressions for the refractive index variation of both sapphire substrate and GaN as a function of the temperature. The morphological and optical property evolutions of the layer at all the growth stages were studied by atomic force microscopy (AFM) and transmittance measurements. A good agreement between AFM images and laser reflectometry signal is obtained. During the island growth and coalescence as clearly revealed by AFM images of the GaN layers, the transmittance signal evolves from featureless characteristic to a signal with regular oscillations.
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页码：129 / +
页数：2
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