Preparation of boron-doped diamond nanowires and their application for sensitive electrochemical detection of tryptophan

被引：97

作者：

Szunerits, Sabine ^{[1
,2
]}

Coffinier, Yannick ^{[1
,2
]}

Galopin, Elisabeth ^{[1
,2
]}

Brenner, Josef ^{[3
]}

Boukherroub, Rabah ^{[1
,2
]}

机构：

[1] IRI, USR 3078, F-59658 Villeneuve Dascq, France

[2] IEMN, UMR 8520, F-59652 Villeneuve Dascq, France

[3] Austrian Ctr Competence Tribol, A-2700 Wiener Neustadt, Austria

来源：

ELECTROCHEMISTRY COMMUNICATIONS | 2010年 / 12卷 / 03期

关键词：

Boron-doped diamond nanowires; Tryptophan; Electrochemical sensor; FABRICATION; OXIDATION;

D O I：

10.1016/j.elecom.2010.01.014

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The paper reports on the fabrication and electrochemical investigation of boron-doped diamond nanowires (BDD NWs) electrodes. The nanowires were obtained directly from highly doped polycrystalline diamond substrates using reactive ion etching (RIE) with oxygen plasma. The technique does not require any complicated processing steps such as mask deposition or template removal. The influence of the surface state on the electrochemical characteristics is discussed. The interface with the most favourable electrochemical response is investigated for the detection of tryptophan using differential pulse voltammetry. A detection limit of 5 x 10(-7) M was obtained on oxidized BDD NWs, as compared to 1 x 10(-5) M recorded on planar oxidized boron-doped diamond interfaces. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：438 / 441

页数：4

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