Laser-imaging diagnostics of debris behavior from laser-produced tin plasma for EUV light sources

被引：0

作者：

Nakamura, D. ^{[1
]}

Tanaka, H. ^{[1
]}

Hashimoto, Y. ^{[1
]}

Tamaru, K. ^{[1
]}

Takahashi, A. ^{[1
]}

Okada, T. ^{[1
]}

机构：

[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, 744 Motooka, Fukuoka 8190395, Japan

来源：

PHOTON PROCESSING IN MICROELECTRONICS AND PHOTONICS VI | 2007年 / 6458卷

关键词：

extreme ultraviolet; laser-produced plasma; debris; fast ions; sputtering; laser-induced fluorescence;

D O I：

10.1117/12.698790

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the development of extreme ultraviolet (EUV) light source for EUV lithography systems by laser-produced plasma (LPP), reduction of debris emitted from the plasma such as ions, droplets and neutral atoms is one of the most important factors. In our study, we developed a two-dimensional (2D) laser-induced fluorescence (LIF) imaging system for neutral atoms from the plasma and investigated neutral debris behaviors in order to obtain the guideline for the optimization of debris shields. Dependence of atomic emission on a thickness of LPP Sri target film was observed and the distributions of emitted neutral atoms in H-2 gas were measured by 2D LIF system.

引用

页数：9

共 12 条

[1] EUV sources using Xe and Sn discharge plasmas [J].

Borisov, VM ;

Eltsov, AV ;

Ivanov, AS ;

Kiryukhin, YB ;

Khristoforov, OB ;

Mishchenko, VA ;

Prokofiev, AV ;

Vinokhodov, AY ;

Vodchits, VA .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (23) :3254-3265

[2] High-average power EUV light source for the next-generation lithography by laser-produced plasma [J].

Endo, A .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2004, 10 (06) :1298-1306

[3] Debris mitigation and cleaning strategies for Sn-based sources for EUV lithography [J].

Klunder, DJW ;

van Herpen, MMJW ;

Banine, VY ;

Gielissen, K .

Emerging Lithographic Technologies IX, Pts 1 and 2, 2005, 5751 :943-951

[4] Magnetic field ion mitigation for EUV light sources [J].

Komori, H ;

Imai, Y ;

Soumagne, G ;

Abe, T ;

Suganuma, T ;

Endo, A .

Emerging Lithographic Technologies IX, Pts 1 and 2, 2005, 5751 :859-866

[5]

Matsunami N., 1984, DATA NUCL DATA TABLE, V31

[6] High conversion efficiency mass-limited Sn-based laser plasma source for extreme ultraviolet lithography [J].

Richardson, M ;

Koay, CS ;

Takenoshita, K ;

Keyser, C ;

Al-Rabban, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (02) :785-790

[7] Demonstration of a foil trap technique to eliminate laser plasma atomic debris and small particulates [J].

Shmaenok, LA ;

de Bruijn, CC ;

Fledderus, H ;

Stuik, R ;

Schmidt, AA ;

Simanovskii, DM ;

Sorokin, AA ;

Andreeva, TA ;

Bijkerk, F .

EMERGING LITHOGRAPHIC TECHNOLOGIES II, 1998, 3331 :90-94

[8] Extreme ultraviolet light sources for use in semiconductor lithography - state of the art and future development [J].

Stamm, U .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (23) :3244-3253

[9] Comparative study on emission characteristics of extreme ultraviolet radiation from CO2 and Nd:YAG laser-produced tin plasmas -: art. no. 041503 [J].

Tanaka, H ;

Matsumoto, A ;

Akinaga, K ;

Takahashi, A ;

Okada, T .

APPLIED PHYSICS LETTERS, 2005, 87 (04)

[10] Development of a target for laser-produced plasma EUV light source using Sn nano-particles [J].

Tanaka, H ;

Akinaga, K ;

Takahashi, A ;

Okada, T .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 79 (4-6) :1493-1495

← 1 2 →